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| PZT159 PNP Silicon Planar High Current Transistor P b Lead(Pb)-Free BASE 1 3 EM ITTER COLLECTOR 2, 4 SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Collector Current Total Device Disspation TA=25C Junction Temperature Storage, Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -100 -60 -6 -5 -15 3 +150 -55 to +150 Unit V V V A A W C C *Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min). Device Marking PZT159 =159 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage(1) IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-100A, IC=0 Collector Cut-O Current VCB=-80V, IE=0 Collector Cut-O Current VCES =-60V Emitter-Cut-O Current VEB=-6V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO Min -100 -60 -6 Max Max -50 -50 -10 Unit V V V nA nA nA WEITRON http://www.weitron.com.tw 1/4 11-Jul-07 PZT159 ELECTRICAL CHARACTERISTICS (TA=25C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, IC=-10mA VCE=-1V, IC=-2A VCE=-1V, IC=-5A VCE=-1V, IC=-10A Collector-Emitter Saturation Voltage IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Base-Emitter Saturation Voltage IC=-5A, IB=-500mA Base-Emitter On Voltage VCE=-1V, IC=-5A hFE1 hFE2 hFE3 hFE4 VCE(sat) 100 100 75 10 - 200 200 90 25 -20 -85 -155 -370 -1.08 -0.935 300 -50 -140 -210 -460 -1.24 -1.07 - mV VBE(sat) VBE(on) V V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-10V, IC=-100mA, f=50MHz Output Capacitance VCB=-10V, IE=0, f=1MHz fT Cob - 120 74 - MHz pF SWITCHING TIMES Switching Times VCC=-10V,IC =-2A, IB1=IB2=-200mA Note 1.Pulse Test : Pulse width < 300s, Duty cycle 20%. ton to 82 350 ns WEITRON http://www.weitron.com.tw 2/4 11-Jul-07 PZT159 1.8 VCE=-1V +100C +25C 300 1.8 1.6 1.4 VCE(sat) V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 IC/IB=50 IC/IB=10 hFE-Normalised Gain 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 -55C TA=25C 200 100 hFE-Typical Gain 0.1 1 10 20 0.01 0.1 1 10 20 Fig.1 Current Gain - Collector Current Collector Current(A) Fig.2 Saturation Voltage - Collector Current Collector Current(A) 1.8 1.6 1.4 IC / IB=10 1.8 1.6 1.4 IC / IB=10 -55C +25C +100C VCE(sat) (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 10 20 -55C +25C +175C VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 +175C 0.1 1 10 20 Fig.3 Saturation Voltage - Collector Current Collector Current(A) Fig.4 Saturation Voltage - Collector Current Collector Current(A) 100 1.8 1.6 VCE=-1V TA=25C VBE(on) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Collector Current (A) -55C +25C +100C 10 D.C. 1 100ms 10ms 1s 1.0ms 0.1ms +175C 0.1 1 10 20 0.1 0.1 Fig.5 On Voltage - Collector Current Collector Current(A) 1 10 100 Fig.6 Safe Operating Area Collector Emitter Current(A) WEITRON http://www.weitron.com.tw 3/4 11-Jul-07 PZT159 SOT-223 Outline Dimensions unit:mm A F DIM MILLIMETERS MIN MAX 4 S 1 2 3 B D L G C H M K J A B C D F G H J K L M S 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw 4/4 11-Jul-07 |
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